Keystone Electronics - 8610

KEY Part #: K7359536

8610 Hinnakujundus (USD) [217491tk Laos]

  • 1 pcs$0.19775
  • 10 pcs$0.17481
  • 50 pcs$0.12735
  • 100 pcs$0.12233
  • 250 pcs$0.10985
  • 1,000 pcs$0.08738
  • 2,500 pcs$0.07989
  • 5,000 pcs$0.07490

Osa number:
8610
Tootja:
Keystone Electronics
Täpsem kirjeldus:
PLUG HOLE NYLON 1.375 DIA. Lamps 6.3V 4mm Round T1.25 Wire Terminals
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Board toetab, Aukupistikud, Nupud, Seibid, Lisatarvikud, Seibid - puks, õlg, Kruvid, poldid and Kinnitusklambrid ...
Konkurentsieelis:
We specialize in Keystone Electronics 8610 electronic components. 8610 can be shipped within 24 hours after order. If you have any demands for 8610, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

8610 Toote atribuudid

Osa number : 8610
Tootja : Keystone Electronics
Kirjeldus : PLUG HOLE NYLON 1.375 DIA
Sari : -
Osa olek : Active
Tüüp : Body Plug
Värv : Black
Materjal : Nylon
Augu läbimõõt : 1.375" (34.93mm)
Ääriku läbimõõt : 1.500" (38.10mm) 1 1/2"
Paneeli paksus : 0.125" (3.18mm) 1/8"

Samuti võite olla huvitatud
  • K4A4G085WE-BIRC

    Samsung Semiconductor

    4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

  • K4ABG165WA-MCWE

    Samsung Semiconductor

    32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

  • K4A4G085WE-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

  • K4A4G085WF-BCTD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

  • K4A4G085WF-BITD

    Samsung Semiconductor

    4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

  • K4A4G165WE-BCWE

    Samsung Semiconductor

    4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.