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  1. Kodu
  2. Tooted
  3. DRAM
  4. DDR4
  5. K4A4G165WE-BCWE

Samsung Semiconductor - K4A4G165WE-BCWE

KEY Part #: K7359583

[14339tk Laos]

    Osa number:
    K4A4G165WE-BCWE
    Tootja:
    Samsung Semiconductor
    Täpsem kirjeldus:
    4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.
    Manufacturer's standard lead time:
    Laos
    Säilitusaeg:
    Üks aasta
    Chip From:
    Hongkong
    RoHS:
    Makseviis:
    Saadetise viis:
    Perekonna kategooriad:
    KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: HBM Flarebolt, HBM Aquabolt, DDR3, SLC Nand, GDDR5, DDR4, LPDDR3 and MODULE ...
    Konkurentsieelis:
    We specialize in Samsung Semiconductor K4A4G165WE-BCWE electronic components. K4A4G165WE-BCWE can be shipped within 24 hours after order. If you have any demands for K4A4G165WE-BCWE, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4A4G165WE-BCWE Toote atribuudid

    Osa number : K4A4G165WE-BCWE
    Tootja : Samsung Semiconductor
    Kirjeldus : 4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production
    Sari : DDR4
    tihedus : 4 Gb
    Org. : 256M x 16
    kiirus : 3200 Mbps
    Pinge : 1.2 V
    Temp. : 0 ~ 85 °C
    pakend : 96FBGA
    toote staatus : Mass Production

    Viimased uudised

    High Bandwidth Memory is Catching on for Data-intensive Computing
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    SSDs, DRAM and gaming: Unlocking a new level of performance
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Speed for the next generation of mobile devices
    Samsung Z-SSD SZ985
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    [Video] The Future of Autonomous Driving: Samsung’s Memory Component Solutions
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
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    • K4A4G085WF-BITD

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      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

    • K4A4G165WE-BCWE

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      4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.

    Kuumad osad