Samsung Semiconductor - K4ABG165WA-MCWE

KEY Part #: K7359579

[22057tk Laos]

Osa number:: K4ABG165WA-MCWE

Tootja:: Samsung Semiconductor

Täpsem kirjeldus:: 32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

Manufacturer's standard lead time:: Laos

Säilitusaeg:: Üks aasta

Chip From:: Hongkong

RoHS:

Makseviis:

Saadetise viis:

Perekonna kategooriad:: KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: GDDR5, SLC Nand, LPDDR4, MODULE, DDR4, LPDDR5, GDDR6 and LPDDR4X ...

Konkurentsieelis:: We specialize in Samsung Semiconductor K4ABG165WA-MCWE electronic components. K4ABG165WA-MCWE can be shipped within 24 hours after order. If you have any demands for K4ABG165WA-MCWE, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

K4ABG165WA-MCWE Toote atribuudid

Osa number : K4ABG165WA-MCWE

Tootja : Samsung Semiconductor

Kirjeldus : 32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample

Sari : DDR4

tihedus : 32 Gb

Org. : 2G x 16

kiirus : 3200 Mbps

Pinge : 1.2 V

Temp. : 0 ~ 85 °C

pakend : 96FBGA

toote staatus : Sample

Viimased uudised

Driving the Artificial Intelligence Evolution with In-Memory Computing

Evolving Mobile Solutions: Samsung at MWC 2018

Bringing Artificial Intelligence to Devices Everywhere

Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing

Unlocking the Power of Cloud Computing

Samsung’s PM1733 SSD and High Density DIMMs Support AMD EPYC™ 7002 Series Processor

Mission Peak Reference Server System for NGSFF SSD

Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards

Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time

Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM

How Will 5G Impact on Memory?

Speed for the next generation of mobile devices

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