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  1. Kodu
  2. Tooted
  3. DRAM
  4. DDR4
  5. K4ABG165WA-MCWE

Samsung Semiconductor - K4ABG165WA-MCWE

KEY Part #: K7359579

[22057tk Laos]

    Osa number:
    K4ABG165WA-MCWE
    Tootja:
    Samsung Semiconductor
    Täpsem kirjeldus:
    32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.
    Manufacturer's standard lead time:
    Laos
    Säilitusaeg:
    Üks aasta
    Chip From:
    Hongkong
    RoHS:
    Makseviis:
    Saadetise viis:
    Perekonna kategooriad:
    KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: HBM Flarebolt, LPDDR4, GDDR5, GDDR6, LPDDR4X, DDR3, HBM Aquabolt and LPDDR5 ...
    Konkurentsieelis:
    We specialize in Samsung Semiconductor K4ABG165WA-MCWE electronic components. K4ABG165WA-MCWE can be shipped within 24 hours after order. If you have any demands for K4ABG165WA-MCWE, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4ABG165WA-MCWE Toote atribuudid

    Osa number : K4ABG165WA-MCWE
    Tootja : Samsung Semiconductor
    Kirjeldus : 32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample
    Sari : DDR4
    tihedus : 32 Gb
    Org. : 2G x 16
    kiirus : 3200 Mbps
    Pinge : 1.2 V
    Temp. : 0 ~ 85 °C
    pakend : 96FBGA
    toote staatus : Sample

    Viimased uudised

    Driving the Artificial Intelligence Evolution with In-Memory Computing
    Evolving Mobile Solutions: Samsung at MWC 2018
    Bringing Artificial Intelligence to Devices Everywhere
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    Unlocking the Power of Cloud Computing
    Samsung’s PM1733 SSD and High Density DIMMs Support AMD EPYC™ 7002 Series Processor
    Mission Peak Reference Server System for NGSFF SSD
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    How Will 5G Impact on Memory?
    Speed for the next generation of mobile devices
    Samuti võite olla huvitatud
    • K4A4G085WE-BIRC

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      4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

    • K4ABG165WA-MCWE

      Samsung Semiconductor

      32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

    • K4A4G085WE-BITD

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      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

    • K4A4G085WF-BCTD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

    • K4A4G085WF-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

    • K4A4G165WE-BCWE

      Samsung Semiconductor

      4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.

    Kuumad osad