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  1. Kodu
  2. Tooted
  3. DRAM
  4. DDR4
  5. K4A4G085WF-BCTD

Samsung Semiconductor - K4A4G085WF-BCTD

KEY Part #: K7359581

[20623tk Laos]

    Osa number:
    K4A4G085WF-BCTD
    Tootja:
    Samsung Semiconductor
    Täpsem kirjeldus:
    4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.
    Manufacturer's standard lead time:
    Laos
    Säilitusaeg:
    Üks aasta
    Chip From:
    Hongkong
    RoHS:
    Makseviis:
    Saadetise viis:
    Perekonna kategooriad:
    KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: LPDDR3, DDR3, MODULE, HBM Aquabolt, LPDDR4, DDR4, HBM Flarebolt and LPDDR4X ...
    Konkurentsieelis:
    We specialize in Samsung Semiconductor K4A4G085WF-BCTD electronic components. K4A4G085WF-BCTD can be shipped within 24 hours after order. If you have any demands for K4A4G085WF-BCTD, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4A4G085WF-BCTD Toote atribuudid

    Osa number : K4A4G085WF-BCTD
    Tootja : Samsung Semiconductor
    Kirjeldus : 4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production
    Sari : DDR4
    tihedus : 4 Gb
    Org. : 512M x 8
    kiirus : 2666 Mbps
    Pinge : 1.2 V
    Temp. : 0 ~ 85 °C
    pakend : 78FBGA
    toote staatus : Mass Production

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    Samuti võite olla huvitatud
    • K4A4G085WE-BIRC

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      4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

    • K4ABG165WA-MCWE

      Samsung Semiconductor

      32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

    • K4A4G085WE-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

    • K4A4G085WF-BCTD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

    • K4A4G085WF-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

    • K4A4G165WE-BCWE

      Samsung Semiconductor

      4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.

    Kuumad osad