Vishay Semiconductor Diodes Division - BAV200-GS18

KEY Part #: K6458655

BAV200-GS18 Hinnakujundus (USD) [3596977tk Laos]

  • 1 pcs$0.01085
  • 10,000 pcs$0.01080

Osa number:
BAV200-GS18
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 50V 250MA SOD80. Diodes - General Purpose, Power, Switching 60 Volt 625mA
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - FET, MOSFET - üksikud, Dioodid - Zener - üksikud, Türistorid - DIAC-d, SIDAC-id, Transistorid - programmeeritav unijunktsioon, Transistorid - FET, MOSFET - massiivid, Transistorid - bipolaarsed (BJT) - RF, Dioodid - RF and Transistorid - JFET-id ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division BAV200-GS18 electronic components. BAV200-GS18 can be shipped within 24 hours after order. If you have any demands for BAV200-GS18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAV200-GS18 Toote atribuudid

Osa number : BAV200-GS18
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 50V 250MA SOD80
Sari : Automotive, AEC-Q101
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 50V
Praegune - keskmine puhastatud (Io) : 250mA (DC)
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1V @ 100mA
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 50ns
Praegune - vastupidine leke @ Vr : 100nA @ 50V
Mahtuvus @ Vr, F : 1.5pF @ 0V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : SOD-80 Variant
Tarnija seadme pakett : SOD-80 QuadroMELF
Töötemperatuur - ristmik : 150°C (Max)

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