STPSC10H065G-TR Hinnakujundus (USD) [47125tk Laos]
- 1 pcs$0.82972
- 1,000 pcs$0.79021
- 2,000 pcs$0.75070
- 5,000 pcs$0.72248
- Osa number:
- STPSC10H065G-TR
- Tootja:
- STMicroelectronics
- Täpsem kirjeldus:
- DIODE SILICON 650V 10A D2PAK. Schottky Diodes & Rectifiers 650 V 10A Schottky silicon carbid T2PAK
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - IGBT-moodulid, Transistorid - programmeeritav unijunktsioon, Türistorid - SCR - moodulid, Transistorid - bipolaarsed (BJT) - eelkallutatud m, Transistorid - FET, MOSFET - üksikud, Transistorid - bipolaarsed (BJT) - massiivid, Transistorid - bipolaarsed (BJT) - üksikud and Türistorid - TRIAC-d ...
- Konkurentsieelis:
- We specialize in STMicroelectronics STPSC10H065G-TR electronic components. STPSC10H065G-TR can be shipped within 24 hours after order. If you have any demands for STPSC10H065G-TR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STPSC10H065G-TR Toote atribuudid
Osa number :
STPSC10H065G-TR
Tootja :
STMicroelectronics
Kirjeldus :
DIODE SILICON 650V 10A D2PAK
Sari :
-
Osa olek :
Active
Dioodi tüüp :
Silicon Carbide Schottky
Pinge - tagurpidi alalisvool (Vr) (max) :
650V
Praegune - keskmine puhastatud (Io) :
10A
Pinge - edasi (Vf) (maksimaalselt) @ kui :
1.75V @ 10A
Kiirus :
No Recovery Time > 500mA (Io)
Vastupidine taastumisaeg (trr) :
0ns
Praegune - vastupidine leke @ Vr :
100µA @ 650V
Mahtuvus @ Vr, F :
480pF @ 0V, 1MHz
Paigaldus tüüp :
Surface Mount
Pakett / kohver :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Tarnija seadme pakett :
D²PAK
Töötemperatuur - ristmik :
-40°C ~ 175°C
Viimased uudised
Samuti võite olla huvitatud
-
-
BAS16E6327HTSA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching AF DIODE 85V 0.25A
-
-
CMDD6001 TR
Central Semiconductor Corp
DIODE GEN PURP 75V 250MA SOD323. Diodes - General Purpose, Power, Switching Ultra Low Leakage 71Vr 100Vrrm 250mA
-
VS-5EWH06FNTR-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 5A DPAK. Rectifiers Hyperfast 5A 600V 18ns
-
1N4448W-E3-08
Vishay Semiconductor Diodes Division
DIODE GEN PURP 75V 150MA SOD123. Diodes - General Purpose, Power, Switching 100 Volt 500mA 4ns
Kuumad osad
- IDT06S60CHKSA1
- GP10A-5016M3/54
- 1N4006GPE-M3/73
- D740N36TXPSA1
- UF4005 BK
- JANS1N6677UR-1
- BA157GP-M3/54
- GP02-40-M3/73
- 1N4004GPE-E3/93
- RU 4DS
- VS-MBRD330TRLPBF
- SK310B/TR13
- SB10-05A3-BT
- DLA11C-TR-E
- GPA804-BP
- 1N5401-AP
- SS32HE3/57T
- SS25HE3/52T
- SS320HE-TP
- RJU6053WDPP-M0#T2
- S3GHE3/57T
- RS3BHE3/9AT
- RGP5020-E3/54
- GPP15M-E3/54
- GI917-E3/54
- FGP30D-E3/73
- MBRD835L
- MR856
- MBRS3201T3
- SIDC53D120H6X1SA3
- VS-MUR1520PBF
- 80EPS08
- S3AB-13
- FR1J-LTP
- D255K06BXPSA1
- STPSC5H12D
- RGF1D-E3/67A
- RB068LAM150TR
- RF01VM2STE-17
- LS103A-GS18
选择你的位置