VS-8EWF02S-M3 Hinnakujundus (USD) [26568tk Laos]
- 1 pcs$1.49838
- 10 pcs$1.34546
- 25 pcs$1.27204
- 100 pcs$1.04592
- 250 pcs$0.99230
- 500 pcs$0.89039
- 1,000 pcs$0.75093
- 2,500 pcs$0.71517
- Osa number:
- VS-8EWF02S-M3
- Täpsem kirjeldus:
- DIODE GEN PURP 200V 8A TO252AA. Diodes - General Purpose, Power, Switching New Input Diodes - D-PAK-e3
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - IGBT - üksikud, Transistorid - programmeeritav unijunktsioon, Transistorid - bipolaarsed (BJT) - ühepoolsed, eel, Transistorid - JFET-id, Türistorid - DIAC-d, SIDAC-id, Transistorid - bipolaarsed (BJT) - üksikud, Türistorid - SCR and Türistorid - TRIAC-d ...
- Konkurentsieelis:
- We specialize in Vishay Semiconductor Diodes Division VS-8EWF02S-M3 electronic components. VS-8EWF02S-M3 can be shipped within 24 hours after order. If you have any demands for VS-8EWF02S-M3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-8EWF02S-M3 Toote atribuudid
Osa number :
VS-8EWF02S-M3
Tootja :
Vishay Semiconductor Diodes Division
Kirjeldus :
DIODE GEN PURP 200V 8A TO252AA
Sari :
-
Osa olek :
Active
Dioodi tüüp :
Standard
Pinge - tagurpidi alalisvool (Vr) (max) :
200V
Praegune - keskmine puhastatud (Io) :
8A
Pinge - edasi (Vf) (maksimaalselt) @ kui :
1.2V @ 8A
Kiirus :
Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) :
55ns
Praegune - vastupidine leke @ Vr :
100µA @ 200V
Mahtuvus @ Vr, F :
-
Paigaldus tüüp :
Surface Mount
Pakett / kohver :
TO-252-3, DPak (2 Leads + Tab), SC-63
Tarnija seadme pakett :
D-PAK (TO-252AA)
Töötemperatuur - ristmik :
-40°C ~ 150°C
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VS-8EWF02S-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 8A TO252AA. Diodes - General Purpose, Power, Switching New Input Diodes - D-PAK-e3
-
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