[1924tk Laos]
- Osa number:
- US1BHE3/61T
- Täpsem kirjeldus:
- DIODE GEN PURP 100V 1A DO214AC.
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - IGBT-moodulid, Transistorid - JFET-id, Türistorid - DIAC-d, SIDAC-id, Türistorid - SCR - moodulid, Transistorid - IGBT - üksikud, Transistorid - eriotstarbelised, Transistorid - FET, MOSFET - massiivid and Transistorid - FET, MOSFET - RF ...
- Konkurentsieelis:
- We specialize in Vishay Semiconductor Diodes Division US1BHE3/61T electronic components. US1BHE3/61T can be shipped within 24 hours after order. If you have any demands for US1BHE3/61T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
US1BHE3/61T Toote atribuudid
Osa number :
US1BHE3/61T
Tootja :
Vishay Semiconductor Diodes Division
Kirjeldus :
DIODE GEN PURP 100V 1A DO214AC
Sari :
-
Osa olek :
Obsolete
Dioodi tüüp :
Standard
Pinge - tagurpidi alalisvool (Vr) (max) :
100V
Praegune - keskmine puhastatud (Io) :
1A
Pinge - edasi (Vf) (maksimaalselt) @ kui :
1V @ 1A
Kiirus :
Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) :
50ns
Praegune - vastupidine leke @ Vr :
10µA @ 100V
Mahtuvus @ Vr, F :
15pF @ 4V, 1MHz
Paigaldus tüüp :
Surface Mount
Pakett / kohver :
DO-214AC, SMA
Tarnija seadme pakett :
DO-214AC (SMA)
Töötemperatuur - ristmik :
-55°C ~ 150°C
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