Vishay Semiconductor Diodes Division - EGL34GHE3_A/I

KEY Part #: K6457886

EGL34GHE3_A/I Hinnakujundus (USD) [732237tk Laos]

  • 1 pcs$0.05051

Osa number:
EGL34GHE3_A/I
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 400V 500MA DO213. Rectifiers 0.5A,400V,50NS AEC-Q101 Qualified
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - JFET-id, Transistorid - bipolaarsed (BJT) - eelkallutatud m, Türistorid - TRIAC-d, Dioodid - alaldid - ühekordsed, Transistorid - IGBT - massiivid, Türistorid - SCR, Transistorid - IGBT - üksikud and Elektrijuhi moodulid ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division EGL34GHE3_A/I electronic components. EGL34GHE3_A/I can be shipped within 24 hours after order. If you have any demands for EGL34GHE3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EGL34GHE3_A/I Toote atribuudid

Osa number : EGL34GHE3_A/I
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 400V 500MA DO213
Sari : Automotive, AEC-Q101, Superectifier®
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 400V
Praegune - keskmine puhastatud (Io) : 500mA
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.35V @ 500mA
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 50ns
Praegune - vastupidine leke @ Vr : 5µA @ 400V
Mahtuvus @ Vr, F : 7pF @ 4V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : DO-213AA (Glass)
Tarnija seadme pakett : DO-213AA (GL34)
Töötemperatuur - ristmik : -65°C ~ 175°C

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