UGB8BTHE3/81 Hinnakujundus (USD) [112580tk Laos]
- 1 pcs$0.32854
- 800 pcs$0.30772
- Osa number:
- UGB8BTHE3/81
- Täpsem kirjeldus:
- DIODE GEN PURP 100V 8A TO263AB. Rectifiers 100 Volt 8.0A 20ns 150 Amp IFSM
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - bipolaarsed (BJT) - RF, Transistorid - bipolaarsed (BJT) - massiivid, Transistorid - IGBT - massiivid, Transistorid - IGBT-moodulid, Transistorid - JFET-id, Dioodid - sillaldid, Türistorid - DIAC-d, SIDAC-id and Dioodid - muutuva mahtuvusega (muutujad, varactors ...
- Konkurentsieelis:
- We specialize in Vishay Semiconductor Diodes Division UGB8BTHE3/81 electronic components. UGB8BTHE3/81 can be shipped within 24 hours after order. If you have any demands for UGB8BTHE3/81, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
UGB8BTHE3/81 Toote atribuudid
Osa number :
UGB8BTHE3/81
Tootja :
Vishay Semiconductor Diodes Division
Kirjeldus :
DIODE GEN PURP 100V 8A TO263AB
Sari :
-
Osa olek :
Active
Dioodi tüüp :
Standard
Pinge - tagurpidi alalisvool (Vr) (max) :
100V
Praegune - keskmine puhastatud (Io) :
8A
Pinge - edasi (Vf) (maksimaalselt) @ kui :
1V @ 8A
Kiirus :
Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) :
30ns
Praegune - vastupidine leke @ Vr :
10µA @ 100V
Mahtuvus @ Vr, F :
-
Paigaldus tüüp :
Surface Mount
Pakett / kohver :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Tarnija seadme pakett :
TO-263AB
Töötemperatuur - ristmik :
-55°C ~ 150°C
Viimased uudised
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