BAS2103WE6433HTMA1 Hinnakujundus (USD) [2865239tk Laos]
- 1 pcs$0.01447
- 10,000 pcs$0.01440
- Osa number:
- BAS2103WE6433HTMA1
- Tootja:
- Infineon Technologies
- Täpsem kirjeldus:
- DIODE GEN PURP 200V 250MA SOD323. Diodes - General Purpose, Power, Switching Silicon Switch Diode
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - JFET-id, Transistorid - bipolaarsed (BJT) - ühepoolsed, eel, Transistorid - FET, MOSFET - RF, Transistorid - IGBT - üksikud, Dioodid - RF, Transistorid - bipolaarsed (BJT) - üksikud, Transistorid - FET, MOSFET - üksikud and Elektrijuhi moodulid ...
- Konkurentsieelis:
- We specialize in Infineon Technologies BAS2103WE6433HTMA1 electronic components. BAS2103WE6433HTMA1 can be shipped within 24 hours after order. If you have any demands for BAS2103WE6433HTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BAS2103WE6433HTMA1 Toote atribuudid
Osa number :
BAS2103WE6433HTMA1
Tootja :
Infineon Technologies
Kirjeldus :
DIODE GEN PURP 200V 250MA SOD323
Sari :
-
Osa olek :
Last Time Buy
Dioodi tüüp :
Standard
Pinge - tagurpidi alalisvool (Vr) (max) :
200V
Praegune - keskmine puhastatud (Io) :
250mA (DC)
Pinge - edasi (Vf) (maksimaalselt) @ kui :
1.25V @ 200mA
Kiirus :
Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) :
50ns
Praegune - vastupidine leke @ Vr :
100nA @ 200V
Mahtuvus @ Vr, F :
5pF @ 0V, 1MHz
Paigaldus tüüp :
Surface Mount
Pakett / kohver :
SC-76, SOD-323
Tarnija seadme pakett :
PG-SOD323-2
Töötemperatuur - ristmik :
150°C (Max)
Viimased uudised
Samuti võite olla huvitatud
-
BAL74E6327HTSA1
Infineon Technologies
DIODE GEN PURP 50V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Switch Diode 250mA
-
BAT54T
ON Semiconductor
DIODE SCHOTTKY 30V 200MA SOT523. Schottky Diodes & Rectifiers 0.2A,30V,Surf Mt SCHOTTKY Barr DIODE
-
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23. Diodes - General Purpose, Power, Switching Silicon Switch Diode
-
BAS116E6433HTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode
-
-
BAL99E6327HTSA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Tuning Diode
Kuumad osad
- S1J-TP
- S9147D
- SF10DG-B
- RGP10G-6038M3/73
- 1N4005-N-0-3-AP
- R7004203XXUA
- VS-1EFH02W-M3-18
- 1N3297R
- SS5P9HM3/86A
- UES2604
- EGP10AHM3/73
- EGP10A
- S4240F
- R9G20609CSOO
- 1N3909R
- 1N5622GP-E3/54
- SR502-T-F
- BYD13GGP-E3/73
- DGS17-03CS
- VF20100SG-E3/45
- SD103BW-13-F
- FESE16DT-E3/45
- JANTX1N6623
- MR756G
- RS2K-13
- 181NQ045R
- 50WQ10FN
- VS-11DQ04TR
- BAS21TA
- SS36HE3_A/I
- MBRS1100T3H
- BAT43-L0 A0G
- IDW30E60AFKSA1
- STPSC10H065G-TR
- RM 11CV
- NRVS3GB
- GP10JE-E3/73
- GL41J-E3/97
- BY206GP-E3/54
- LS101C-GS18
选择你的位置