Kui teie asukohta pole loendis, valige üks järgmistest:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski

Kui teie asukohta pole loendis, valige üks järgmistest:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Kodu
  2. Tooted
  3. DRAM
  4. DDR3
  5. K4B1G0846I-BCMA

Samsung Semiconductor - K4B1G0846I-BCMA

KEY Part #: K7359632

[17745tk Laos]

    Osa number:
    K4B1G0846I-BCMA
    Tootja:
    Samsung Semiconductor
    Täpsem kirjeldus:
    1 Gb 128M x 8 1866 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production.
    Manufacturer's standard lead time:
    Laos
    Säilitusaeg:
    Üks aasta
    Chip From:
    Hongkong
    RoHS:
    Makseviis:
    Saadetise viis:
    Perekonna kategooriad:
    KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: LPDDR3, HBM Flarebolt, MODULE, LPDDR4X, HBM Aquabolt, GDDR5, DDR4 and LPDDR4 ...
    Konkurentsieelis:
    We specialize in Samsung Semiconductor K4B1G0846I-BCMA electronic components. K4B1G0846I-BCMA can be shipped within 24 hours after order. If you have any demands for K4B1G0846I-BCMA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B1G0846I-BCMA Toote atribuudid

    Osa number : K4B1G0846I-BCMA
    Tootja : Samsung Semiconductor
    Kirjeldus : 1 Gb 128M x 8 1866 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production
    Sari : DDR3
    tihedus : 1 Gb
    Org. : 128M x 8
    kiirus : 1866 Mbps
    Pinge : 1.5 V
    Temp. : 0 ~ 85 °C
    pakend : 78FBGA
    toote staatus : Mass Production

    Viimased uudised

    Samsung Memory Solutions for Automotive
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Samsung’s PM1733 SSD and High Density DIMMs Support AMD EPYC™ 7002 Series Processor
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    Evolving Mobile Solutions: Samsung at MWC 2018
    Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package
    Mass Production of Fifth-Generation V-NAND has Started
    The Ultra-Low Latency SSD, Z-SSD
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    Samuti võite olla huvitatud
    • K3UH5H50AM-AGCL

      Samsung Semiconductor

      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

    • K3UH5H50AM-EGCL

      Samsung Semiconductor

      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production.

    • K3UH5H50AM-JGCL

      Samsung Semiconductor

      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 432FBGA Mass Production.

    • K3UH6H60BM-AGCL

      Samsung Semiconductor

      48 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

    • K3UH6H60BM-EGCL

      Samsung Semiconductor

      48 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production.

    • KHA843801B-MC12

      Samsung Semiconductor

      4 Gb 1024 2.0 Gbps 32 ms MPGA Mass Production.

    Kuumad osad