Kui teie asukohta pole loendis, valige üks järgmistest:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski

Kui teie asukohta pole loendis, valige üks järgmistest:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Kodu
  2. Tooted
  3. DRAM
  4. DDR3
  5. K4B2G1646F-BYNB

Samsung Semiconductor - K4B2G1646F-BYNB

KEY Part #: K7359666

[19090tk Laos]

    Osa number:
    K4B2G1646F-BYNB
    Tootja:
    Samsung Semiconductor
    Täpsem kirjeldus:
    2 Gb 128M x 16 2133 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.
    Manufacturer's standard lead time:
    Laos
    Säilitusaeg:
    Üks aasta
    Chip From:
    Hongkong
    RoHS:
    Makseviis:
    Saadetise viis:
    Perekonna kategooriad:
    KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: GDDR6, SLC Nand, GDDR5, HBM Flarebolt, LPDDR4, LPDDR3, MODULE and DDR3 ...
    Konkurentsieelis:
    We specialize in Samsung Semiconductor K4B2G1646F-BYNB electronic components. K4B2G1646F-BYNB can be shipped within 24 hours after order. If you have any demands for K4B2G1646F-BYNB, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B2G1646F-BYNB Toote atribuudid

    Osa number : K4B2G1646F-BYNB
    Tootja : Samsung Semiconductor
    Kirjeldus : 2 Gb 128M x 16 2133 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production
    Sari : DDR3
    tihedus : 2 Gb
    Org. : 128M x 16
    kiirus : 2133 Mbps
    Pinge : 1.35 V
    Temp. : 0 ~ 85 °C
    pakend : 96FBGA
    toote staatus : Mass Production

    Viimased uudised

    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Evolving Mobile Solutions: Samsung at MWC 2018
    Speed for the next generation of mobile devices
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
    5G and Memory - from Connected Thinking to Connected Living
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    [Video] The Future of Autonomous Driving: Samsung’s Memory Component Solutions
    Samuti võite olla huvitatud
    • K3UH5H50AM-AGCL

      Samsung Semiconductor

      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

    • K3UH5H50AM-EGCL

      Samsung Semiconductor

      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production.

    • K3UH5H50AM-JGCL

      Samsung Semiconductor

      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 432FBGA Mass Production.

    • K3UH6H60BM-AGCL

      Samsung Semiconductor

      48 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

    • K3UH6H60BM-EGCL

      Samsung Semiconductor

      48 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production.

    • K3UH7H70AM-AGCL

      Samsung Semiconductor

      64 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

    Kuumad osad