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  1. Kodu
  2. Tooted
  3. DRAM
  4. DDR3
  5. K4B2G1646F-BCK0

Samsung Semiconductor - K4B2G1646F-BCK0

KEY Part #: K7359657

[23528tk Laos]

    Osa number:
    K4B2G1646F-BCK0
    Tootja:
    Samsung Semiconductor
    Täpsem kirjeldus:
    2 Gb 128M x 16 1600 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production.
    Manufacturer's standard lead time:
    Laos
    Säilitusaeg:
    Üks aasta
    Chip From:
    Hongkong
    RoHS:
    Makseviis:
    Saadetise viis:
    Perekonna kategooriad:
    KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: DDR3, GDDR5, SLC Nand, DDR4, LPDDR4, HBM Flarebolt, MODULE and GDDR6 ...
    Konkurentsieelis:
    We specialize in Samsung Semiconductor K4B2G1646F-BCK0 electronic components. K4B2G1646F-BCK0 can be shipped within 24 hours after order. If you have any demands for K4B2G1646F-BCK0, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B2G1646F-BCK0 Toote atribuudid

    Osa number : K4B2G1646F-BCK0
    Tootja : Samsung Semiconductor
    Kirjeldus : 2 Gb 128M x 16 1600 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production
    Sari : DDR3
    tihedus : 2 Gb
    Org. : 128M x 16
    kiirus : 1600 Mbps
    Pinge : 1.5 V
    Temp. : 0 ~ 85 °C
    pakend : 96FBGA
    toote staatus : Mass Production

    Viimased uudised

    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Autonomous Driving and the Quest for Safety
    Samsung Z-SSD SZ985
    Samsung’s PM1733 SSD and High Density DIMMs Support AMD EPYC™ 7002 Series Processor
    [Video] 5G memory solutions : 5G. All in the Memory.
    Samsung Memory Solutions for Automotive
    5G and Memory - from Connected Thinking to Connected Living
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Automotive Driven by Small Packages Under the Hood
    SSDs, DRAM and gaming: Unlocking a new level of performance
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
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