Kui teie asukohta pole loendis, valige üks järgmistest:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski

Kui teie asukohta pole loendis, valige üks järgmistest:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Kodu
  2. Tooted
  3. DRAM
  4. LPDDR4X
  5. K3UHBHB0BM-EGCL

Samsung Semiconductor - K3UHBHB0BM-EGCL

KEY Part #: K7359737

[20238tk Laos]

    Osa number:
    K3UHBHB0BM-EGCL
    Tootja:
    Samsung Semiconductor
    Täpsem kirjeldus:
    96 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production.
    Manufacturer's standard lead time:
    Laos
    Säilitusaeg:
    Üks aasta
    Chip From:
    Hongkong
    RoHS:
    Makseviis:
    Saadetise viis:
    Perekonna kategooriad:
    KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: HBM Flarebolt, DDR3, GDDR5, LPDDR4X, LPDDR5, MODULE, LPDDR3 and HBM Aquabolt ...
    Konkurentsieelis:
    We specialize in Samsung Semiconductor K3UHBHB0BM-EGCL electronic components. K3UHBHB0BM-EGCL can be shipped within 24 hours after order. If you have any demands for K3UHBHB0BM-EGCL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K3UHBHB0BM-EGCL Toote atribuudid

    Osa number : K3UHBHB0BM-EGCL
    Tootja : Samsung Semiconductor
    Kirjeldus : 96 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production
    Sari : DDR3
    tihedus : 96 Gb
    Org. : x64
    kiirus : 4266 Mbps
    Pinge : 1.8 / 1.1 / 0.6 V
    Temp. : -25 ~ 85 °C
    pakend : 376FBGA
    toote staatus : Mass Production

    Viimased uudised

    Samsung Z-SSD SZ985
    [Video] 5G memory solutions : 5G. All in the Memory.
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    SSDs, DRAM and gaming: Unlocking a new level of performance
    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    5G and Memory - from Connected Thinking to Connected Living
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Samsung’s PM1733 SSD and High Density DIMMs Support AMD EPYC™ 7002 Series Processor
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Autonomous Driving and the Quest for Safety
    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    Samuti võite olla huvitatud
    • M378A1K43BB1-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CTD

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43CB2-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    • M378A1K43CB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    • M378A1K43CB2-CTD

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    Kuumad osad