Kui teie asukohta pole loendis, valige üks järgmistest:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski

Kui teie asukohta pole loendis, valige üks järgmistest:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Kodu
  2. Tooted
  3. DRAM
  4. LPDDR4X
  5. K4UHE3D4AA-GFCL

Samsung Semiconductor - K4UHE3D4AA-GFCL

KEY Part #: K7359753

[25712tk Laos]

    Osa number:
    K4UHE3D4AA-GFCL
    Tootja:
    Samsung Semiconductor
    Täpsem kirjeldus:
    24 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 95 °C 200FBGA Mass Production.
    Manufacturer's standard lead time:
    Laos
    Säilitusaeg:
    Üks aasta
    Chip From:
    Hongkong
    RoHS:
    Makseviis:
    Saadetise viis:
    Perekonna kategooriad:
    KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: LPDDR3, LPDDR4X, LPDDR4, GDDR5, MODULE, DDR4, LPDDR5 and HBM Flarebolt ...
    Konkurentsieelis:
    We specialize in Samsung Semiconductor K4UHE3D4AA-GFCL electronic components. K4UHE3D4AA-GFCL can be shipped within 24 hours after order. If you have any demands for K4UHE3D4AA-GFCL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4UHE3D4AA-GFCL Toote atribuudid

    Osa number : K4UHE3D4AA-GFCL
    Tootja : Samsung Semiconductor
    Kirjeldus : 24 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 95 °C 200FBGA Mass Production
    Sari : DDR3
    tihedus : 24 Gb
    Org. : x32
    kiirus : 4266 Mbps
    Pinge : 1.8 / 1.1 / 0.6 V
    Temp. : -40 ~ 95 °C
    pakend : 200FBGA
    toote staatus : Mass Production

    Viimased uudised

    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    Speed for the next generation of mobile devices
    How Will 5G Impact on Memory?
    Evolving Mobile Solutions: Samsung at MWC 2018
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    High Bandwidth Memory is Catching on for Data-intensive Computing
    SSDs, DRAM and gaming: Unlocking a new level of performance
    Mass Production of Fifth-Generation V-NAND has Started
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    The Ultra-Low Latency SSD, Z-SSD
    Samuti võite olla huvitatud
    • M392A2K43BB0-CPB

      Samsung Semiconductor

      DDR4 VLP RDIMM 16 GB 2R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 18 EOL.

    • M392A2K43BB0-CRC

      Samsung Semiconductor

      DDR4 VLP RDIMM 16 GB 2R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 18 EOL.

    • M392A4K40BM0-CPB

      Samsung Semiconductor

      DDR4 VLP RDIMM 32 GB 2R x 4 2133 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

    • M392A4K40BM0-CRC

      Samsung Semiconductor

      DDR4 VLP RDIMM 32 GB 2R x 4 2400 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

    • M378A1K43BB1-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    Kuumad osad