Microsemi Corporation - JANTXV1N6628

KEY Part #: K6440127

JANTXV1N6628 Hinnakujundus (USD) [3410tk Laos]

  • 1 pcs$14.93216
  • 10 pcs$13.81236
  • 25 pcs$12.69238

Osa number:
JANTXV1N6628
Tootja:
Microsemi Corporation
Täpsem kirjeldus:
DIODE GEN PURP 660V 1.75A AXIAL. Rectifiers Rectifier
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - JFET-id, Transistorid - bipolaarsed (BJT) - üksikud, Türistorid - TRIAC-d, Türistorid - SCR, Transistorid - bipolaarsed (BJT) - eelkallutatud m, Transistorid - bipolaarsed (BJT) - massiivid, Transistorid - eriotstarbelised and Dioodid - RF ...
Konkurentsieelis:
We specialize in Microsemi Corporation JANTXV1N6628 electronic components. JANTXV1N6628 can be shipped within 24 hours after order. If you have any demands for JANTXV1N6628, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JANTXV1N6628 Toote atribuudid

Osa number : JANTXV1N6628
Tootja : Microsemi Corporation
Kirjeldus : DIODE GEN PURP 660V 1.75A AXIAL
Sari : Military, MIL-PRF-19500/590
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 660V
Praegune - keskmine puhastatud (Io) : 1.75A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.35V @ 2A
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 30ns
Praegune - vastupidine leke @ Vr : 2µA @ 660V
Mahtuvus @ Vr, F : 40pF @ 10V, 1MHz
Paigaldus tüüp : Through Hole
Pakett / kohver : E, Axial
Tarnija seadme pakett : -
Töötemperatuur - ristmik : -65°C ~ 150°C

Samuti võite olla huvitatud
  • GSD2004W-E3-18

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 240V 225MA SOD123. Diodes - General Purpose, Power, Switching 300 Volt 225mA 50ns

  • BAT42W-HE3-18

    Vishay Semiconductor Diodes Division

    DIODE SCHOTTKY 30V 200MA SOD123. Schottky Diodes & Rectifiers 30Volt 200mA 4A IFSM AUTO

  • GSD2004W-G3-08

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 240V 225MA SOD123. Diodes - General Purpose, Power, Switching 300 Volt 225mA 50ns

  • BAT42W-G3-08

    Vishay Semiconductor Diodes Division

    DIODE SCHOTTKY 30V 200MA SOD123. Schottky Diodes & Rectifiers 30Volt 200mA 4A IFSM

  • BAT54W-HE3-08

    Vishay Semiconductor Diodes Division

    DIODE SCHOTTKY 30V 200MA SOD123. Schottky Diodes & Rectifiers 200mA 30 Volt

  • BAT46W-HE3-18

    Vishay Semiconductor Diodes Division

    DIODE SCHOTTKY 100V 150MA SOD123. Schottky Diodes & Rectifiers 100Volt 150mA 750mA AUTO