ES2A-M3/52T Hinnakujundus (USD) [771501tk Laos]
- 1 pcs$0.05059
- 10,500 pcs$0.05034
- Osa number:
- ES2A-M3/52T
- Täpsem kirjeldus:
- DIODE GEN PURP 50V 2A DO214AA. Rectifiers 2A,50V,20NS,UF Rect,SMD
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - programmeeritav unijunktsioon, Elektrijuhi moodulid, Transistorid - FET, MOSFET - massiivid, Transistorid - bipolaarsed (BJT) - üksikud, Transistorid - JFET-id, Transistorid - bipolaarsed (BJT) - eelkallutatud m, Dioodid - Zener - massiivid and Dioodid - alaldid - massiivid ...
- Konkurentsieelis:
- We specialize in Vishay Semiconductor Diodes Division ES2A-M3/52T electronic components. ES2A-M3/52T can be shipped within 24 hours after order. If you have any demands for ES2A-M3/52T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ES2A-M3/52T Toote atribuudid
Osa number :
ES2A-M3/52T
Tootja :
Vishay Semiconductor Diodes Division
Kirjeldus :
DIODE GEN PURP 50V 2A DO214AA
Sari :
-
Osa olek :
Active
Dioodi tüüp :
Standard
Pinge - tagurpidi alalisvool (Vr) (max) :
50V
Praegune - keskmine puhastatud (Io) :
2A
Pinge - edasi (Vf) (maksimaalselt) @ kui :
900mV @ 2A
Kiirus :
Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) :
30ns
Praegune - vastupidine leke @ Vr :
10µA @ 50V
Mahtuvus @ Vr, F :
18pF @ 4V, 1MHz
Paigaldus tüüp :
Surface Mount
Pakett / kohver :
DO-214AA, SMB
Tarnija seadme pakett :
DO-214AA (SMB)
Töötemperatuur - ristmik :
-55°C ~ 150°C
Viimased uudised
Samuti võite olla huvitatud
-
RGL34B-E3/98
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 500MA DO213. Diodes - General Purpose, Power, Switching 100 Volt 0.5A 150ns 10 Amp IFSM
-
RGL34D-E3/83
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 500MA DO213. Diodes - General Purpose, Power, Switching 200 Volt 0.5A 150ns 10 Amp IFSM
-
RGL34B-E3/83
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 500MA DO213. Diodes - General Purpose, Power, Switching 100 Volt 0.5A 150ns 10 Amp IFSM
-
RGL34J-E3/83
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 500MA DO213. Diodes - General Purpose, Power, Switching 600 Volt 0.5A 250ns 10 Amp IFSM
-
BYM07-200-E3/98
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 500MA DO213. Rectifiers 0.5 Amp 200 Volt
-
BYM07-100-E3/98
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 500MA DO213. Rectifiers 0.5 Amp 100 Volt
Kuumad osad
- BYV29B-600PJ
- RL104-N-2-3-AP
- 1N3172A
- CMSH2-40M BK
- VI30120SGHM3/4W
- JAN1N1614R
- 1N4946GP-M3/54
- UES2605R
- CD214B-F3150
- SB340S-E3/54
- DSR01S30SC(TPL3)
- RGP02-16EHE3/53
- ES3GHE3/57T
- UF8CT-E3/4W
- S1DA-E3/5AT
- 1N4446_T50R
- HFA08TB60STRR
- PR3005-T
- PR2006G-T
- STTH20R04W
- SIDC73D170E6X1SA2
- CD214A-B240LF
- 10WQ045FN
- MA2711100L
- MMBD914-7
- 10ETF02STRL
- IRKE91/04A
- 30EPF12
- 20ETF02
- BAT42W-7
- SM4933A-TP
- FR154S-TP
- FR604-AP
- GIB1403-E3/81
- SE40PGHM3_A/H
- RN 1ZV
- CDBB3150-G
- PMEG2010AET,215
- 1N4005GPE-E3/54
- BAS16WF
选择你的位置