CDBGBSC201200-G Hinnakujundus (USD) [6888tk Laos]
- 1 pcs$5.98205
- Osa number:
- CDBGBSC201200-G
- Tootja:
- Comchip Technology
- Täpsem kirjeldus:
- DIODE DUAL SILICON CARBIDE POWER. Schottky Diodes & Rectifiers DUAL SiC POWER SCHOTTKY 20A 1200V
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - IGBT-moodulid, Transistorid - eriotstarbelised, Transistorid - IGBT - üksikud, Transistorid - bipolaarsed (BJT) - massiivid, Türistorid - DIAC-d, SIDAC-id, Dioodid - alaldid - massiivid, Transistorid - bipolaarsed (BJT) - RF and Elektrijuhi moodulid ...
- Konkurentsieelis:
- We specialize in Comchip Technology CDBGBSC201200-G electronic components. CDBGBSC201200-G can be shipped within 24 hours after order. If you have any demands for CDBGBSC201200-G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CDBGBSC201200-G Toote atribuudid
Osa number :
CDBGBSC201200-G
Tootja :
Comchip Technology
Kirjeldus :
DIODE DUAL SILICON CARBIDE POWER
Sari :
-
Osa olek :
Active
Dioodi seadistamine :
1 Pair Common Cathode
Dioodi tüüp :
Silicon Carbide Schottky
Pinge - tagurpidi alalisvool (Vr) (max) :
1200V
Praegune - keskmine puhastatud (Io) (dioodi kohta) :
25.9A (DC)
Pinge - edasi (Vf) (maksimaalselt) @ kui :
1.8V @ 10A
Kiirus :
No Recovery Time > 500mA (Io)
Vastupidine taastumisaeg (trr) :
0ns
Praegune - vastupidine leke @ Vr :
100µA @ 1200V
Töötemperatuur - ristmik :
-55°C ~ 175°C
Paigaldus tüüp :
Through Hole
Pakett / kohver :
TO-247-3
Tarnija seadme pakett :
TO-247
Viimased uudised
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