Vishay Semiconductor Diodes Division - UG10DCT-5410HE3/45

KEY Part #: K6475409

[6110tk Laos]


    Osa number:
    UG10DCT-5410HE3/45
    Tootja:
    Vishay Semiconductor Diodes Division
    Täpsem kirjeldus:
    DIODE ARRAY GP T0220AB.
    Manufacturer's standard lead time:
    Laos
    Säilitusaeg:
    Üks aasta
    Chip From:
    Hongkong
    RoHS:
    Makseviis:
    Saadetise viis:
    Perekonna kategooriad:
    KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - eriotstarbelised, Elektrijuhi moodulid, Transistorid - IGBT - massiivid, Transistorid - bipolaarsed (BJT) - üksikud, Transistorid - IGBT - üksikud, Transistorid - bipolaarsed (BJT) - RF, Transistorid - FET, MOSFET - RF and Transistorid - programmeeritav unijunktsioon ...
    Konkurentsieelis:
    We specialize in Vishay Semiconductor Diodes Division UG10DCT-5410HE3/45 electronic components. UG10DCT-5410HE3/45 can be shipped within 24 hours after order. If you have any demands for UG10DCT-5410HE3/45, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    UG10DCT-5410HE3/45 Toote atribuudid

    Osa number : UG10DCT-5410HE3/45
    Tootja : Vishay Semiconductor Diodes Division
    Kirjeldus : DIODE ARRAY GP T0220AB
    Sari : Automotive, AEC-Q101
    Osa olek : Obsolete
    Dioodi seadistamine : 1 Pair Common Cathode
    Dioodi tüüp : Standard
    Pinge - tagurpidi alalisvool (Vr) (max) : 200V
    Praegune - keskmine puhastatud (Io) (dioodi kohta) : 5A
    Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.1V @ 5A
    Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
    Vastupidine taastumisaeg (trr) : 25ns
    Praegune - vastupidine leke @ Vr : 10µA @ 200V
    Töötemperatuur - ristmik : -40°C ~ 150°C
    Paigaldus tüüp : Through Hole
    Pakett / kohver : TO-220-3
    Tarnija seadme pakett : TO-220AB

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