Vishay Semiconductor Diodes Division - BAW27-TR

KEY Part #: K6455312

BAW27-TR Hinnakujundus (USD) [3340050tk Laos]

  • 1 pcs$0.01107
  • 50,000 pcs$0.00930

Osa number:
BAW27-TR
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 60V 600MA DO35. Diodes - General Purpose, Power, Switching 75 Volt 200mA 4.0 Amp IFSM
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - FET, MOSFET - üksikud, Dioodid - alaldid - massiivid, Türistorid - SCR, Türistorid - DIAC-d, SIDAC-id, Transistorid - bipolaarsed (BJT) - RF, Dioodid - Zener - massiivid, Dioodid - sillaldid and Transistorid - bipolaarsed (BJT) - massiivid ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division BAW27-TR electronic components. BAW27-TR can be shipped within 24 hours after order. If you have any demands for BAW27-TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAW27-TR Toote atribuudid

Osa number : BAW27-TR
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 60V 600MA DO35
Sari : Automotive, AEC-Q101
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 60V
Praegune - keskmine puhastatud (Io) : 600mA (DC)
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.25V @ 400mA
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 6ns
Praegune - vastupidine leke @ Vr : 100nA @ 60V
Mahtuvus @ Vr, F : 4pF @ 0V, 1MHz
Paigaldus tüüp : Through Hole
Pakett / kohver : DO-204AH, DO-35, Axial
Tarnija seadme pakett : DO-35
Töötemperatuur - ristmik : 175°C (Max)

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