VS-1EFH02HM3/I Hinnakujundus (USD) [792956tk Laos]
- 1 pcs$0.04665
- 10,000 pcs$0.04227
- 30,000 pcs$0.03887
- Osa number:
- VS-1EFH02HM3/I
- Täpsem kirjeldus:
- DIODE GEN PURP 200V 1A DO219AB. Rectifiers Hypfst Rct 1A 200V
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Dioodid - Zener - massiivid, Transistorid - FET, MOSFET - RF, Transistorid - IGBT - massiivid, Türistorid - TRIAC-d, Dioodid - RF, Transistorid - bipolaarsed (BJT) - ühepoolsed, eel, Dioodid - alaldid - ühekordsed and Transistorid - eriotstarbelised ...
- Konkurentsieelis:
- We specialize in Vishay Semiconductor Diodes Division VS-1EFH02HM3/I electronic components. VS-1EFH02HM3/I can be shipped within 24 hours after order. If you have any demands for VS-1EFH02HM3/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-1EFH02HM3/I Toote atribuudid
Osa number :
VS-1EFH02HM3/I
Tootja :
Vishay Semiconductor Diodes Division
Kirjeldus :
DIODE GEN PURP 200V 1A DO219AB
Sari :
Automotive, AEC-Q101, FRED Pt®
Osa olek :
Active
Dioodi tüüp :
Standard
Pinge - tagurpidi alalisvool (Vr) (max) :
200V
Praegune - keskmine puhastatud (Io) :
1A
Pinge - edasi (Vf) (maksimaalselt) @ kui :
930mV @ 1A
Kiirus :
Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) :
25ns
Praegune - vastupidine leke @ Vr :
2µA @ 200V
Mahtuvus @ Vr, F :
-
Paigaldus tüüp :
Surface Mount
Pakett / kohver :
DO-219AB
Tarnija seadme pakett :
DO-219AB (SMF)
Töötemperatuur - ristmik :
-55°C ~ 175°C
Viimased uudised
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