FESB16JT-E3/45 Hinnakujundus (USD) [51104tk Laos]
- 1 pcs$0.76512
- 1,000 pcs$0.34684
- Osa number:
- FESB16JT-E3/45
- Täpsem kirjeldus:
- DIODE GEN PURP 600V 16A TO263AB.
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Türistorid - SCR - moodulid, Transistorid - FET, MOSFET - üksikud, Türistorid - TRIAC-d, Transistorid - programmeeritav unijunktsioon, Transistorid - bipolaarsed (BJT) - üksikud, Transistorid - IGBT-moodulid, Transistorid - bipolaarsed (BJT) - RF and Transistorid - IGBT - üksikud ...
- Konkurentsieelis:
- We specialize in Vishay Semiconductor Diodes Division FESB16JT-E3/45 electronic components. FESB16JT-E3/45 can be shipped within 24 hours after order. If you have any demands for FESB16JT-E3/45, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FESB16JT-E3/45 Toote atribuudid
Osa number :
FESB16JT-E3/45
Tootja :
Vishay Semiconductor Diodes Division
Kirjeldus :
DIODE GEN PURP 600V 16A TO263AB
Sari :
-
Osa olek :
Active
Dioodi tüüp :
Standard
Pinge - tagurpidi alalisvool (Vr) (max) :
600V
Praegune - keskmine puhastatud (Io) :
16A
Pinge - edasi (Vf) (maksimaalselt) @ kui :
1.5V @ 16A
Kiirus :
Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) :
50ns
Praegune - vastupidine leke @ Vr :
10µA @ 600V
Mahtuvus @ Vr, F :
145pF @ 4V, 1MHz
Paigaldus tüüp :
Surface Mount
Pakett / kohver :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Tarnija seadme pakett :
TO-263AB
Töötemperatuur - ristmik :
-65°C ~ 150°C
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