Toshiba Semiconductor and Storage - TPC8026(TE12L,Q,M)

KEY Part #: K6407351

[1003tk Laos]

Osa number:: TPC8026(TE12L,Q,M)

Tootja:: Toshiba Semiconductor and Storage

Täpsem kirjeldus:: MOSFET N-CH 30V 13A 8-SOIC.

Manufacturer's standard lead time:: Laos

Säilitusaeg:: Üks aasta

Chip From:: Hongkong

RoHS:

Makseviis:

Saadetise viis:

Perekonna kategooriad:: KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - IGBT-moodulid, Türistorid - SCR - moodulid, Transistorid - FET, MOSFET - massiivid, Dioodid - alaldid - ühekordsed, Dioodid - sillaldid, Dioodid - Zener - üksikud, Transistorid - IGBT - massiivid and Transistorid - FET, MOSFET - üksikud ...

Konkurentsieelis:: We specialize in Toshiba Semiconductor and Storage TPC8026(TE12L,Q,M) electronic components. TPC8026(TE12L,Q,M) can be shipped within 24 hours after order. If you have any demands for TPC8026(TE12L,Q,M), Please submit a Request for Quotation here or send us an email: rfq@key-components.com

TPC8026(TE12L,Q,M) Toote atribuudid

Osa number : TPC8026(TE12L,Q,M)

Tootja : Toshiba Semiconductor and Storage

Kirjeldus : MOSFET N-CH 30V 13A 8-SOIC

Sari : -

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 30V

Praegune - pidev äravool (id) @ 25 ° C : 13A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 4.5V, 10V

Rds sees (max) @ id, Vgs : 6.6 mOhm @ 6.5A, 10V

Vgs (th) (maksimaalselt) @ id : 2.5V @ 1mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 42nC @ 10V

VG (maksimaalselt) : ±20V

Sisendmahtuvus (Ciss) (Max) @ Vds : 1800pF @ 10V

FET funktsioon : -

Võimsuse hajumine (max) : 1W (Ta)

Töötemperatuur : 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : 8-SOP (5.5x6.0)

Pakett / kohver : 8-SOIC (0.173", 4.40mm Width)

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Toshiba Semiconductor and Storage - TPC8026(TE12L,Q,M)

[1003tk Laos]

TPC8026(TE12L,Q,M) Toote atribuudid

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