Toshiba Semiconductor and Storage - 2SK2883(TE24L,Q)

KEY Part #: K6407365

[998tk Laos]

Osa number:: 2SK2883(TE24L,Q)

Tootja:: Toshiba Semiconductor and Storage

Täpsem kirjeldus:: MOSFET N-CH 800V 3A TO220SM.

Manufacturer's standard lead time:: Laos

Säilitusaeg:: Üks aasta

Chip From:: Hongkong

RoHS:

Makseviis:

Saadetise viis:

Perekonna kategooriad:: KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - bipolaarsed (BJT) - ühepoolsed, eel, Dioodid - Zener - massiivid, Transistorid - JFET-id, Transistorid - IGBT - massiivid, Transistorid - IGBT-moodulid, Transistorid - FET, MOSFET - RF, Dioodid - RF and Transistorid - IGBT - üksikud ...

Konkurentsieelis:: We specialize in Toshiba Semiconductor and Storage 2SK2883(TE24L,Q) electronic components. 2SK2883(TE24L,Q) can be shipped within 24 hours after order. If you have any demands for 2SK2883(TE24L,Q), Please submit a Request for Quotation here or send us an email: rfq@key-components.com

2SK2883(TE24L,Q) Toote atribuudid

Osa number : 2SK2883(TE24L,Q)

Tootja : Toshiba Semiconductor and Storage

Kirjeldus : MOSFET N-CH 800V 3A TO220SM

Sari : -

Osa olek : Obsolete

FET tüüp : N-Channel

Tehnoloogia : MOSFET (Metal Oxide)

Tühjendage toitepingele (Vdss) : 800V

Praegune - pidev äravool (id) @ 25 ° C : 3A (Ta)

Ajami pinge (max Rds sees, min Rds sees) : 10V

Rds sees (max) @ id, Vgs : 3.6 Ohm @ 1.5A, 10V

Vgs (th) (maksimaalselt) @ id : 4V @ 1mA

Värava laadimine (Qg) (maksimaalselt) @ Vgs : 25nC @ 10V

VG (maksimaalselt) : ±30V

Sisendmahtuvus (Ciss) (Max) @ Vds : 750pF @ 25V

FET funktsioon : -

Võimsuse hajumine (max) : 75W (Tc)

Töötemperatuur : 150°C (TJ)

Paigaldus tüüp : Surface Mount

Tarnija seadme pakett : TO-220SM

Pakett / kohver : TO-252-3, DPak (2 Leads + Tab), SC-63

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Toshiba Semiconductor and Storage - 2SK2883(TE24L,Q)

[998tk Laos]

2SK2883(TE24L,Q) Toote atribuudid

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ZVN4210A

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2SK2883(TE24L,Q)