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  1. Kodu
  2. Tooted
  3. DRAM
  4. LPDDR4
  5. K4FBE3D4HM-GUCL

Samsung Semiconductor - K4FBE3D4HM-GUCL

KEY Part #: K7359776

[20290tk Laos]

    Osa number:
    K4FBE3D4HM-GUCL
    Tootja:
    Samsung Semiconductor
    Täpsem kirjeldus:
    32 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 125 °C 200FBGA Mass Production.
    Manufacturer's standard lead time:
    Laos
    Säilitusaeg:
    Üks aasta
    Chip From:
    Hongkong
    RoHS:
    Makseviis:
    Saadetise viis:
    Perekonna kategooriad:
    KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: MODULE, GDDR5, SLC Nand, LPDDR4X, HBM Flarebolt, LPDDR5, HBM Aquabolt and DDR4 ...
    Konkurentsieelis:
    We specialize in Samsung Semiconductor K4FBE3D4HM-GUCL electronic components. K4FBE3D4HM-GUCL can be shipped within 24 hours after order. If you have any demands for K4FBE3D4HM-GUCL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4FBE3D4HM-GUCL Toote atribuudid

    Osa number : K4FBE3D4HM-GUCL
    Tootja : Samsung Semiconductor
    Kirjeldus : 32 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 125 °C 200FBGA Mass Production
    Sari : DDR3
    tihedus : 32 Gb
    Org. : x32
    kiirus : 4266 Mbps
    Pinge : 1.8 / 1.1 / 1.1 V
    Temp. : -40 ~ 125 °C
    pakend : 200FBGA
    toote staatus : Mass Production

    Viimased uudised

    5G and Memory - from Connected Thinking to Connected Living
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    Autonomous Driving and the Quest for Safety
    Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    Samsung Now Producing Industry’s Highest Density (3GB) LPDDR3 Mobile Memory for Smartphones
    Samsung Enhances Functional Safety to its Automotive Semiconductors with ISO 26262 Certification
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
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