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  1. Kodu
  2. Tooted
  3. DRAM
  4. LPDDR4
  5. K4F8E3S4HD-GHCL

Samsung Semiconductor - K4F8E3S4HD-GHCL

KEY Part #: K7359772

[23654tk Laos]

    Osa number:
    K4F8E3S4HD-GHCL
    Tootja:
    Samsung Semiconductor
    Täpsem kirjeldus:
    8 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production.
    Manufacturer's standard lead time:
    Laos
    Säilitusaeg:
    Üks aasta
    Chip From:
    Hongkong
    RoHS:
    Makseviis:
    Saadetise viis:
    Perekonna kategooriad:
    KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: LPDDR3, DDR3, SLC Nand, HBM Flarebolt, DDR4, LPDDR4X, LPDDR5 and MODULE ...
    Konkurentsieelis:
    We specialize in Samsung Semiconductor K4F8E3S4HD-GHCL electronic components. K4F8E3S4HD-GHCL can be shipped within 24 hours after order. If you have any demands for K4F8E3S4HD-GHCL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4F8E3S4HD-GHCL Toote atribuudid

    Osa number : K4F8E3S4HD-GHCL
    Tootja : Samsung Semiconductor
    Kirjeldus : 8 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production
    Sari : DDR3
    tihedus : 8 Gb
    Org. : x32
    kiirus : 4266 Mbps
    Pinge : 1.8 / 1.1 / 1.1 V
    Temp. : -40 ~ 105 °C
    pakend : 200FBGA
    toote staatus : Mass Production

    Viimased uudised

    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Inside the building blocks of the 5G future
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Speed for the next generation of mobile devices
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Autonomous Driving and the Quest for Safety
    High Bandwidth Memory is Catching on for Data-intensive Computing
    How Will 5G Impact on Memory?
    [Video] 5G memory solutions : 5G. All in the Memory.
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Bringing Artificial Intelligence to Devices Everywhere
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
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