Vishay Semiconductor Diodes Division - BAV21W-G3-18

KEY Part #: K6440022

BAV21W-G3-18 Hinnakujundus (USD) [2423462tk Laos]

  • 1 pcs$0.01611
  • 10,000 pcs$0.01603

Osa number:
BAV21W-G3-18
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 200V 250MA SOD123. Diodes - General Purpose, Power, Switching 250 Volt 200mA 50ns 1A IFSM
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - eriotstarbelised, Transistorid - FET, MOSFET - massiivid, Dioodid - RF, Elektrijuhi moodulid, Türistorid - TRIAC-d, Dioodid - alaldid - massiivid, Transistorid - JFET-id and Transistorid - IGBT - üksikud ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division BAV21W-G3-18 electronic components. BAV21W-G3-18 can be shipped within 24 hours after order. If you have any demands for BAV21W-G3-18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAV21W-G3-18 Toote atribuudid

Osa number : BAV21W-G3-18
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 200V 250MA SOD123
Sari : Automotive, AEC-Q101
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 200V
Praegune - keskmine puhastatud (Io) : 250mA (DC)
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1V @ 100mA
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 50ns
Praegune - vastupidine leke @ Vr : 100nA @ 150V
Mahtuvus @ Vr, F : 1.5pF @ 0V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : SOD-123
Tarnija seadme pakett : SOD-123
Töötemperatuur - ristmik : 175°C (Max)

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