1N4150W-HE3-18 Hinnakujundus (USD) [2750629tk Laos]
- 1 pcs$0.01419
- 10,000 pcs$0.01412
- Osa number:
- 1N4150W-HE3-18
- Täpsem kirjeldus:
- DIODE GEN PURP 50V 200MA SOD123. Diodes - General Purpose, Power, Switching 50 Volt 500mA 4ns
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Dioodid - Zener - üksikud, Transistorid - IGBT - massiivid, Transistorid - programmeeritav unijunktsioon, Transistorid - bipolaarsed (BJT) - ühepoolsed, eel, Dioodid - muutuva mahtuvusega (muutujad, varactors, Transistorid - FET, MOSFET - üksikud, Dioodid - alaldid - ühekordsed and Transistorid - FET, MOSFET - RF ...
- Konkurentsieelis:
- We specialize in Vishay Semiconductor Diodes Division 1N4150W-HE3-18 electronic components. 1N4150W-HE3-18 can be shipped within 24 hours after order. If you have any demands for 1N4150W-HE3-18, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1N4150W-HE3-18 Toote atribuudid
Osa number :
1N4150W-HE3-18
Tootja :
Vishay Semiconductor Diodes Division
Kirjeldus :
DIODE GEN PURP 50V 200MA SOD123
Sari :
-
Osa olek :
Active
Dioodi tüüp :
Standard
Pinge - tagurpidi alalisvool (Vr) (max) :
50V
Praegune - keskmine puhastatud (Io) :
200mA
Pinge - edasi (Vf) (maksimaalselt) @ kui :
1V @ 200mA
Kiirus :
Small Signal =< 200mA (Io), Any Speed
Vastupidine taastumisaeg (trr) :
4ns
Praegune - vastupidine leke @ Vr :
100nA @ 50V
Mahtuvus @ Vr, F :
2.5pF @ 0V, 1MHz
Paigaldus tüüp :
Surface Mount
Pakett / kohver :
SOD-123
Tarnija seadme pakett :
SOD-123
Töötemperatuur - ristmik :
-55°C ~ 150°C
Viimased uudised
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