1N4448W-HE3-18 Hinnakujundus (USD) [2422835tk Laos]
- 1 pcs$0.01527
- 10,000 pcs$0.01412
- Osa number:
- 1N4448W-HE3-18
- Täpsem kirjeldus:
- DIODE GEN PURP 75V 150MA SOD123. Diodes - General Purpose, Power, Switching 100 Volt 500mA 4ns
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - bipolaarsed (BJT) - üksikud, Transistorid - IGBT - massiivid, Transistorid - bipolaarsed (BJT) - RF, Transistorid - IGBT - üksikud, Transistorid - bipolaarsed (BJT) - massiivid, Transistorid - bipolaarsed (BJT) - ühepoolsed, eel, Türistorid - SCR - moodulid and Dioodid - RF ...
- Konkurentsieelis:
- We specialize in Vishay Semiconductor Diodes Division 1N4448W-HE3-18 electronic components. 1N4448W-HE3-18 can be shipped within 24 hours after order. If you have any demands for 1N4448W-HE3-18, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1N4448W-HE3-18 Toote atribuudid
Osa number :
1N4448W-HE3-18
Tootja :
Vishay Semiconductor Diodes Division
Kirjeldus :
DIODE GEN PURP 75V 150MA SOD123
Sari :
Automotive, AEC-Q101
Osa olek :
Active
Dioodi tüüp :
Standard
Pinge - tagurpidi alalisvool (Vr) (max) :
75V
Praegune - keskmine puhastatud (Io) :
150mA
Pinge - edasi (Vf) (maksimaalselt) @ kui :
720mV @ 5mA
Kiirus :
Small Signal =< 200mA (Io), Any Speed
Vastupidine taastumisaeg (trr) :
4ns
Praegune - vastupidine leke @ Vr :
5µA @ 75V
Mahtuvus @ Vr, F :
-
Paigaldus tüüp :
Surface Mount
Pakett / kohver :
SOD-123
Tarnija seadme pakett :
SOD-123
Töötemperatuur - ristmik :
-55°C ~ 150°C
Viimased uudised
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