Vishay Semiconductor Diodes Division - 1N4247GP-E3/73

KEY Part #: K6458323

1N4247GP-E3/73 Hinnakujundus (USD) [1076814tk Laos]

  • 1 pcs$0.03435
  • 9,000 pcs$0.03177

Osa number:
1N4247GP-E3/73
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 600V 1A DO204AL. Rectifiers 1.0 Amp 600 Volt Glass Passivated
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - IGBT - massiivid, Transistorid - bipolaarsed (BJT) - üksikud, Transistorid - FET, MOSFET - massiivid, Türistorid - SCR, Transistorid - bipolaarsed (BJT) - eelkallutatud m, Elektrijuhi moodulid, Transistorid - FET, MOSFET - RF and Transistorid - IGBT-moodulid ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division 1N4247GP-E3/73 electronic components. 1N4247GP-E3/73 can be shipped within 24 hours after order. If you have any demands for 1N4247GP-E3/73, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N4247GP-E3/73 Toote atribuudid

Osa number : 1N4247GP-E3/73
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 600V 1A DO204AL
Sari : SUPERECTIFIER®
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 600V
Praegune - keskmine puhastatud (Io) : 1A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.2V @ 1A
Kiirus : Standard Recovery >500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : -
Praegune - vastupidine leke @ Vr : 1µA @ 600V
Mahtuvus @ Vr, F : 8pF @ 4V, 1MHz
Paigaldus tüüp : Through Hole
Pakett / kohver : DO-204AL, DO-41, Axial
Tarnija seadme pakett : DO-204AL (DO-41)
Töötemperatuur - ristmik : -65°C ~ 160°C

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