Vishay Semiconductor Diodes Division - SE20AFB-M3/6B

KEY Part #: K6458250

SE20AFB-M3/6B Hinnakujundus (USD) [1006146tk Laos]

  • 1 pcs$0.03879
  • 14,000 pcs$0.03860

Osa number:
SE20AFB-M3/6B
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 100V 1.3A DO221AC. Rectifiers 2 Amp 100 volts ESD PROTECTION 13in
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - bipolaarsed (BJT) - üksikud, Transistorid - bipolaarsed (BJT) - eelkallutatud m, Transistorid - bipolaarsed (BJT) - RF, Transistorid - IGBT-moodulid, Dioodid - RF, Transistorid - FET, MOSFET - massiivid, Transistorid - IGBT - üksikud and Transistorid - eriotstarbelised ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division SE20AFB-M3/6B electronic components. SE20AFB-M3/6B can be shipped within 24 hours after order. If you have any demands for SE20AFB-M3/6B, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SE20AFB-M3/6B Toote atribuudid

Osa number : SE20AFB-M3/6B
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 100V 1.3A DO221AC
Sari : Automotive, AEC-Q101
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 100V
Praegune - keskmine puhastatud (Io) : 1.3A (DC)
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.1V @ 2A
Kiirus : Standard Recovery >500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 1.2µs
Praegune - vastupidine leke @ Vr : 5µA @ 100V
Mahtuvus @ Vr, F : 12pF @ 4V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : DO-221AC, SMA Flat Leads
Tarnija seadme pakett : DO-221AC (SlimSMA)
Töötemperatuur - ristmik : -55°C ~ 175°C

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