Taiwan Semiconductor Corporation - ES3DVHM6G

KEY Part #: K6434616

ES3DVHM6G Hinnakujundus (USD) [761822tk Laos]

  • 1 pcs$0.04855

Osa number:
ES3DVHM6G
Tootja:
Taiwan Semiconductor Corporation
Täpsem kirjeldus:
DIODE GEN PURP 200V 3A DO214AB.
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - IGBT-moodulid, Transistorid - bipolaarsed (BJT) - üksikud, Elektrijuhi moodulid, Türistorid - SCR, Transistorid - bipolaarsed (BJT) - massiivid, Dioodid - RF, Türistorid - TRIAC-d and Transistorid - IGBT - üksikud ...
Konkurentsieelis:
We specialize in Taiwan Semiconductor Corporation ES3DVHM6G electronic components. ES3DVHM6G can be shipped within 24 hours after order. If you have any demands for ES3DVHM6G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES3DVHM6G Toote atribuudid

Osa number : ES3DVHM6G
Tootja : Taiwan Semiconductor Corporation
Kirjeldus : DIODE GEN PURP 200V 3A DO214AB
Sari : Automotive, AEC-Q101
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 200V
Praegune - keskmine puhastatud (Io) : 3A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 900mV @ 3A
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 20ns
Praegune - vastupidine leke @ Vr : 10µA @ 200V
Mahtuvus @ Vr, F : 45pF @ 4V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : DO-214AB, SMC
Tarnija seadme pakett : DO-214AB (SMC)
Töötemperatuur - ristmik : -55°C ~ 150°C

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