Vishay Semiconductor Diodes Division - ES3A-E3/9AT

KEY Part #: K6457284

ES3A-E3/9AT Hinnakujundus (USD) [435286tk Laos]

  • 1 pcs$0.08497
  • 3,500 pcs$0.07061

Osa number:
ES3A-E3/9AT
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 50V 3A DO214AB. Rectifiers 50 Volt 3.0A 20ns Glass Passivated
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - FET, MOSFET - RF, Transistorid - FET, MOSFET - üksikud, Transistorid - programmeeritav unijunktsioon, Transistorid - FET, MOSFET - massiivid, Transistorid - JFET-id, Türistorid - DIAC-d, SIDAC-id, Transistorid - IGBT - massiivid and Transistorid - IGBT-moodulid ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division ES3A-E3/9AT electronic components. ES3A-E3/9AT can be shipped within 24 hours after order. If you have any demands for ES3A-E3/9AT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES3A-E3/9AT Toote atribuudid

Osa number : ES3A-E3/9AT
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 50V 3A DO214AB
Sari : -
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 50V
Praegune - keskmine puhastatud (Io) : 3A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 900mV @ 3A
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 30ns
Praegune - vastupidine leke @ Vr : 10µA @ 50V
Mahtuvus @ Vr, F : 45pF @ 4V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : DO-214AB, SMC
Tarnija seadme pakett : DO-214AB (SMC)
Töötemperatuur - ristmik : -55°C ~ 150°C

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