Vishay Semiconductor Diodes Division - B125C800G-E4/51

KEY Part #: K6539912

B125C800G-E4/51 Hinnakujundus (USD) [308641tk Laos]

  • 1 pcs$0.11984
  • 3,000 pcs$0.09916

Osa number:
B125C800G-E4/51
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
BRIDGE RECT 1P 200V 900MA WOG. Bridge Rectifiers 0.9 Amp 200 Volt
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - IGBT - massiivid, Dioodid - alaldid - massiivid, Transistorid - programmeeritav unijunktsioon, Dioodid - sillaldid, Dioodid - RF, Dioodid - Zener - massiivid, Transistorid - eriotstarbelised and Dioodid - Zener - üksikud ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division B125C800G-E4/51 electronic components. B125C800G-E4/51 can be shipped within 24 hours after order. If you have any demands for B125C800G-E4/51, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

B125C800G-E4/51 Toote atribuudid

Osa number : B125C800G-E4/51
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : BRIDGE RECT 1P 200V 900MA WOG
Sari : -
Osa olek : Active
Dioodi tüüp : Single Phase
Tehnoloogia : Standard
Pinge - tipp-tagumine (max) : 200V
Praegune - keskmine puhastatud (Io) : 900mA
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1V @ 900mA
Praegune - vastupidine leke @ Vr : 10µA @ 200V
Töötemperatuur : -40°C ~ 125°C (TJ)
Paigaldus tüüp : Through Hole
Pakett / kohver : 4-Circular, WOG
Tarnija seadme pakett : WOG

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