UGB8JTHE3/81 Hinnakujundus (USD) [93417tk Laos]
- 1 pcs$0.41856
- 800 pcs$0.39203
- Osa number:
- UGB8JTHE3/81
- Täpsem kirjeldus:
- DIODE GEN PURP 600V 8A TO263AB. Rectifiers 8.0A 600 Volt 25ns 65 Amp IFSM
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Türistorid - TRIAC-d, Transistorid - FET, MOSFET - massiivid, Transistorid - IGBT - üksikud, Transistorid - IGBT-moodulid, Dioodid - alaldid - massiivid, Dioodid - Zener - massiivid, Transistorid - JFET-id and Transistorid - eriotstarbelised ...
- Konkurentsieelis:
- We specialize in Vishay Semiconductor Diodes Division UGB8JTHE3/81 electronic components. UGB8JTHE3/81 can be shipped within 24 hours after order. If you have any demands for UGB8JTHE3/81, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
UGB8JTHE3/81 Toote atribuudid
Osa number :
UGB8JTHE3/81
Tootja :
Vishay Semiconductor Diodes Division
Kirjeldus :
DIODE GEN PURP 600V 8A TO263AB
Sari :
-
Osa olek :
Active
Dioodi tüüp :
Standard
Pinge - tagurpidi alalisvool (Vr) (max) :
600V
Praegune - keskmine puhastatud (Io) :
8A
Pinge - edasi (Vf) (maksimaalselt) @ kui :
1.75V @ 8A
Kiirus :
Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) :
50ns
Praegune - vastupidine leke @ Vr :
30µA @ 600V
Mahtuvus @ Vr, F :
-
Paigaldus tüüp :
Surface Mount
Pakett / kohver :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Tarnija seadme pakett :
TO-263AB
Töötemperatuur - ristmik :
-55°C ~ 150°C
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