Vishay Semiconductor Diodes Division - EGL41C-E3/96

KEY Part #: K6449202

EGL41C-E3/96 Hinnakujundus (USD) [761822tk Laos]

  • 1 pcs$0.04855
  • 3,000 pcs$0.04248

Osa number:
EGL41C-E3/96
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 150V 1A DO213AB. Rectifiers 1.0 Amp 150 Volt
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Dioodid - Zener - massiivid, Transistorid - JFET-id, Transistorid - bipolaarsed (BJT) - eelkallutatud m, Transistorid - FET, MOSFET - massiivid, Transistorid - bipolaarsed (BJT) - üksikud, Transistorid - eriotstarbelised, Transistorid - FET, MOSFET - RF and Transistorid - FET, MOSFET - üksikud ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division EGL41C-E3/96 electronic components. EGL41C-E3/96 can be shipped within 24 hours after order. If you have any demands for EGL41C-E3/96, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EGL41C-E3/96 Toote atribuudid

Osa number : EGL41C-E3/96
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 150V 1A DO213AB
Sari : SUPERECTIFIER®
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 150V
Praegune - keskmine puhastatud (Io) : 1A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1V @ 1A
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 50ns
Praegune - vastupidine leke @ Vr : 5µA @ 150V
Mahtuvus @ Vr, F : 20pF @ 4V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : DO-213AB, MELF (Glass)
Tarnija seadme pakett : DO-213AB
Töötemperatuur - ristmik : -65°C ~ 175°C

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