Vishay Semiconductor Diodes Division - UH2DHE3_A/I

KEY Part #: K6440134

UH2DHE3_A/I Hinnakujundus (USD) [406932tk Laos]

  • 1 pcs$0.09089
  • 6,400 pcs$0.08237

Osa number:
UH2DHE3_A/I
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 200V 2A DO214AA. Rectifiers 2A,200V,25ns, SMB Planar FER RECT, SMD
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - eriotstarbelised, Transistorid - FET, MOSFET - üksikud, Transistorid - IGBT-moodulid, Türistorid - SCR, Transistorid - IGBT - üksikud, Transistorid - FET, MOSFET - RF, Dioodid - Zener - massiivid and Transistorid - bipolaarsed (BJT) - eelkallutatud m ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division UH2DHE3_A/I electronic components. UH2DHE3_A/I can be shipped within 24 hours after order. If you have any demands for UH2DHE3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UH2DHE3_A/I Toote atribuudid

Osa number : UH2DHE3_A/I
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 200V 2A DO214AA
Sari : Automotive, AEC-Q101
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 200V
Praegune - keskmine puhastatud (Io) : 2A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.05V @ 2A
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 25ns
Praegune - vastupidine leke @ Vr : 2µA @ 200V
Mahtuvus @ Vr, F : 42pF @ 4V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : DO-214AA, SMB
Tarnija seadme pakett : DO-214AA (SMB)
Töötemperatuur - ristmik : -55°C ~ 175°C

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