Vishay Semiconductor Diodes Division - SE30AFJHM3J/6A

KEY Part #: K6457780

SE30AFJHM3J/6A Hinnakujundus (USD) [680550tk Laos]

  • 1 pcs$0.05435

Osa number:
SE30AFJHM3J/6A
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 600V 3A DO221AC. Rectifiers 3A, 600V, ESD Prot AEC-Q101 Qualified
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - JFET-id, Transistorid - IGBT - massiivid, Transistorid - bipolaarsed (BJT) - ühepoolsed, eel, Transistorid - bipolaarsed (BJT) - eelkallutatud m, Transistorid - bipolaarsed (BJT) - RF, Transistorid - IGBT-moodulid, Dioodid - alaldid - massiivid and Transistorid - bipolaarsed (BJT) - massiivid ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division SE30AFJHM3J/6A electronic components. SE30AFJHM3J/6A can be shipped within 24 hours after order. If you have any demands for SE30AFJHM3J/6A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SE30AFJHM3J/6A Toote atribuudid

Osa number : SE30AFJHM3J/6A
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 600V 3A DO221AC
Sari : Automotive, AEC-Q101, PAR®, SlimSMA™
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 600V
Praegune - keskmine puhastatud (Io) : 3A (DC)
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.1V @ 3A
Kiirus : Standard Recovery >500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 1.5µs
Praegune - vastupidine leke @ Vr : 10µA @ 600V
Mahtuvus @ Vr, F : 19pF @ 4V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : DO-221AC, SMA Flat Leads
Tarnija seadme pakett : DO-221AC (SlimSMA)
Töötemperatuur - ristmik : -55°C ~ 175°C

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