Vishay Semiconductor Diodes Division - B125C800DM-E3/45

KEY Part #: K6539887

B125C800DM-E3/45 Hinnakujundus (USD) [365502tk Laos]

  • 1 pcs$0.10120
  • 5,000 pcs$0.08373

Osa number:
B125C800DM-E3/45
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
BRIDGE RECT 1P 200V 900MA DFM. Bridge Rectifiers 0.9A,200V,DIP,BRIDGE
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Dioodid - Zener - massiivid, Transistorid - bipolaarsed (BJT) - üksikud, Türistorid - DIAC-d, SIDAC-id, Transistorid - bipolaarsed (BJT) - massiivid, Dioodid - sillaldid, Transistorid - eriotstarbelised, Transistorid - bipolaarsed (BJT) - RF and Transistorid - JFET-id ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division B125C800DM-E3/45 electronic components. B125C800DM-E3/45 can be shipped within 24 hours after order. If you have any demands for B125C800DM-E3/45, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

B125C800DM-E3/45 Toote atribuudid

Osa number : B125C800DM-E3/45
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : BRIDGE RECT 1P 200V 900MA DFM
Sari : -
Osa olek : Active
Dioodi tüüp : Single Phase
Tehnoloogia : Standard
Pinge - tipp-tagumine (max) : 200V
Praegune - keskmine puhastatud (Io) : 900mA
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1V @ 900mA
Praegune - vastupidine leke @ Vr : 10µA @ 200V
Töötemperatuur : -40°C ~ 125°C (TJ)
Paigaldus tüüp : Through Hole
Pakett / kohver : 4-EDIP (0.300", 7.62mm)
Tarnija seadme pakett : DFM

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