Vishay Semiconductor Diodes Division - RMPG06JHE3_A/53

KEY Part #: K6438624

RMPG06JHE3_A/53 Hinnakujundus (USD) [738131tk Laos]

  • 1 pcs$0.05099
  • 12,000 pcs$0.05073

Osa number:
RMPG06JHE3_A/53
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GPP 1A 600V 200NS MPG06. Rectifiers 1A, 600V, 200NS, FS, MINIGPPRECT.
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - JFET-id, Transistorid - FET, MOSFET - RF, Transistorid - IGBT - massiivid, Transistorid - bipolaarsed (BJT) - RF, Türistorid - TRIAC-d, Transistorid - FET, MOSFET - massiivid, Transistorid - IGBT - üksikud and Dioodid - muutuva mahtuvusega (muutujad, varactors ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division RMPG06JHE3_A/53 electronic components. RMPG06JHE3_A/53 can be shipped within 24 hours after order. If you have any demands for RMPG06JHE3_A/53, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RMPG06JHE3_A/53 Toote atribuudid

Osa number : RMPG06JHE3_A/53
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GPP 1A 600V 200NS MPG06
Sari : Automotive, AEC-Q101, Superectifier®
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 600V
Praegune - keskmine puhastatud (Io) : 1A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.3V @ 1A
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 200ns
Praegune - vastupidine leke @ Vr : 5µA @ 600V
Mahtuvus @ Vr, F : 6.6pF @ 4V, 1MHz
Paigaldus tüüp : Through Hole
Pakett / kohver : MPG06, Axial
Tarnija seadme pakett : MPG06
Töötemperatuur - ristmik : -55°C ~ 150°C

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