NSB8JTHE3_A/P Hinnakujundus (USD) [128710tk Laos]
- 1 pcs$0.28737
- 1,000 pcs$0.26162
- Osa number:
- NSB8JTHE3_A/P
- Täpsem kirjeldus:
- DIODE GEN PURP 600V 8A TO263AB. Rectifiers 8A 600V Glass Psvtd AEC-Q101 Qualified
- Manufacturer's standard lead time:
- Laos
- Säilitusaeg:
- Üks aasta
- Chip From:
- Hongkong
- RoHS:
- Makseviis:
-
- Saadetise viis:
- Perekonna kategooriad:
- KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - bipolaarsed (BJT) - ühepoolsed, eel, Transistorid - FET, MOSFET - üksikud, Transistorid - bipolaarsed (BJT) - massiivid, Transistorid - bipolaarsed (BJT) - RF, Dioodid - Zener - üksikud, Transistorid - IGBT - massiivid, Dioodid - sillaldid and Transistorid - JFET-id ...
- Konkurentsieelis:
- We specialize in Vishay Semiconductor Diodes Division NSB8JTHE3_A/P electronic components. NSB8JTHE3_A/P can be shipped within 24 hours after order. If you have any demands for NSB8JTHE3_A/P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NSB8JTHE3_A/P Toote atribuudid
Osa number :
NSB8JTHE3_A/P
Tootja :
Vishay Semiconductor Diodes Division
Kirjeldus :
DIODE GEN PURP 600V 8A TO263AB
Sari :
Automotive, AEC-Q101
Osa olek :
Active
Dioodi tüüp :
Standard
Pinge - tagurpidi alalisvool (Vr) (max) :
600V
Praegune - keskmine puhastatud (Io) :
8A
Pinge - edasi (Vf) (maksimaalselt) @ kui :
1.1V @ 8A
Kiirus :
Standard Recovery >500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) :
-
Praegune - vastupidine leke @ Vr :
10µA @ 600V
Mahtuvus @ Vr, F :
55pF @ 4V, 1MHz
Paigaldus tüüp :
Surface Mount
Pakett / kohver :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Tarnija seadme pakett :
TO-263AB
Töötemperatuur - ristmik :
-55°C ~ 150°C
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