Vishay Semiconductor Diodes Division - 1N5406GP-E3/54

KEY Part #: K6440190

1N5406GP-E3/54 Hinnakujundus (USD) [283149tk Laos]

  • 1 pcs$0.13063
  • 2,800 pcs$0.11839

Osa number:
1N5406GP-E3/54
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 600V 3A DO201AD. Rectifiers 3A,600V, STD SUPERECT
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Türistorid - DIAC-d, SIDAC-id, Transistorid - IGBT - üksikud, Transistorid - bipolaarsed (BJT) - RF, Transistorid - FET, MOSFET - RF, Transistorid - JFET-id, Transistorid - bipolaarsed (BJT) - üksikud, Transistorid - programmeeritav unijunktsioon and Transistorid - IGBT-moodulid ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division 1N5406GP-E3/54 electronic components. 1N5406GP-E3/54 can be shipped within 24 hours after order. If you have any demands for 1N5406GP-E3/54, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N5406GP-E3/54 Toote atribuudid

Osa number : 1N5406GP-E3/54
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 600V 3A DO201AD
Sari : -
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 600V
Praegune - keskmine puhastatud (Io) : 3A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.2V @ 3A
Kiirus : Standard Recovery >500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : -
Praegune - vastupidine leke @ Vr : 5µA @ 400V
Mahtuvus @ Vr, F : 30pF @ 4V, 1MHz
Paigaldus tüüp : Through Hole
Pakett / kohver : DO-201AD, Axial
Tarnija seadme pakett : DO-201AD
Töötemperatuur - ristmik : -50°C ~ 150°C

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