Vishay Semiconductor Diodes Division - UG12JT-E3/45

KEY Part #: K6441280

UG12JT-E3/45 Hinnakujundus (USD) [51954tk Laos]

  • 1 pcs$0.73167
  • 10 pcs$0.65684
  • 25 pcs$0.61979
  • 100 pcs$0.52806
  • 250 pcs$0.49582
  • 500 pcs$0.43384
  • 1,000 pcs$0.34004
  • 2,500 pcs$0.31658
  • 5,000 pcs$0.31267

Osa number:
UG12JT-E3/45
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 600V 12A TO220AC.
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Dioodid - alaldid - massiivid, Türistorid - SCR - moodulid, Dioodid - sillaldid, Dioodid - RF, Transistorid - bipolaarsed (BJT) - massiivid, Türistorid - TRIAC-d, Transistorid - programmeeritav unijunktsioon and Transistorid - eriotstarbelised ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division UG12JT-E3/45 electronic components. UG12JT-E3/45 can be shipped within 24 hours after order. If you have any demands for UG12JT-E3/45, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UG12JT-E3/45 Toote atribuudid

Osa number : UG12JT-E3/45
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 600V 12A TO220AC
Sari : -
Osa olek : Obsolete
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 600V
Praegune - keskmine puhastatud (Io) : 12A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.75V @ 12A
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 50ns
Praegune - vastupidine leke @ Vr : 30µA @ 600V
Mahtuvus @ Vr, F : -
Paigaldus tüüp : Through Hole
Pakett / kohver : TO-220-2
Tarnija seadme pakett : TO-220AC
Töötemperatuur - ristmik : 150°C (Max)

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