Vishay Semiconductor Diodes Division - BAS19-HE3-18

KEY Part #: K6458600

BAS19-HE3-18 Hinnakujundus (USD) [2884683tk Laos]

  • 1 pcs$0.01282
  • 10,000 pcs$0.01186

Osa number:
BAS19-HE3-18
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 100V 200MA SOT23. Diodes - General Purpose, Power, Switching 120 Volt 625mA 50ns
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Dioodid - alaldid - massiivid, Türistorid - SCR - moodulid, Transistorid - JFET-id, Transistorid - FET, MOSFET - RF, Transistorid - IGBT-moodulid, Transistorid - FET, MOSFET - üksikud, Dioodid - alaldid - ühekordsed and Türistorid - TRIAC-d ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division BAS19-HE3-18 electronic components. BAS19-HE3-18 can be shipped within 24 hours after order. If you have any demands for BAS19-HE3-18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAS19-HE3-18 Toote atribuudid

Osa number : BAS19-HE3-18
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 100V 200MA SOT23
Sari : Automotive, AEC-Q101
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 100V
Praegune - keskmine puhastatud (Io) : 200mA
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.25V @ 200mA
Kiirus : Small Signal =< 200mA (Io), Any Speed
Vastupidine taastumisaeg (trr) : 50ns
Praegune - vastupidine leke @ Vr : 100nA @ 100V
Mahtuvus @ Vr, F : 5pF @ 0V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : TO-236-3, SC-59, SOT-23-3
Tarnija seadme pakett : SOT-23
Töötemperatuur - ristmik : -55°C ~ 150°C

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