Vishay Semiconductor Diodes Division - BU25H08-M3/A

KEY Part #: K6540031

BU25H08-M3/A Hinnakujundus (USD) [57380tk Laos]

  • 1 pcs$0.68143

Osa number:
BU25H08-M3/A
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
BRIDGE RECT 1P 800V 3.5A BU.
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Dioodid - alaldid - massiivid, Türistorid - SCR, Türistorid - SCR - moodulid, Transistorid - bipolaarsed (BJT) - RF, Transistorid - JFET-id, Dioodid - RF, Türistorid - DIAC-d, SIDAC-id and Transistorid - FET, MOSFET - massiivid ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division BU25H08-M3/A electronic components. BU25H08-M3/A can be shipped within 24 hours after order. If you have any demands for BU25H08-M3/A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BU25H08-M3/A Toote atribuudid

Osa number : BU25H08-M3/A
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : BRIDGE RECT 1P 800V 3.5A BU
Sari : isoCink+™
Osa olek : Active
Dioodi tüüp : Single Phase
Tehnoloogia : Standard
Pinge - tipp-tagumine (max) : 800V
Praegune - keskmine puhastatud (Io) : 3.5A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.05V @ 12.5A
Praegune - vastupidine leke @ Vr : 5µA @ 800V
Töötemperatuur : -55°C ~ 175°C (TJ)
Paigaldus tüüp : Through Hole
Pakett / kohver : 4-SIP, BU
Tarnija seadme pakett : isoCINK+™ BU

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