Vishay Semiconductor Diodes Division - RGP10D-E3/73

KEY Part #: K6453357

RGP10D-E3/73 Hinnakujundus (USD) [980204tk Laos]

  • 1 pcs$0.03773
  • 12,000 pcs$0.03025

Osa number:
RGP10D-E3/73
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 200V 1A DO204AL. Diodes - General Purpose, Power, Switching 1.0A 200 Volt 150ns
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Türistorid - DIAC-d, SIDAC-id, Transistorid - JFET-id, Transistorid - IGBT-moodulid, Dioodid - Zener - massiivid, Transistorid - FET, MOSFET - massiivid, Transistorid - bipolaarsed (BJT) - RF, Transistorid - FET, MOSFET - RF and Transistorid - IGBT - massiivid ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division RGP10D-E3/73 electronic components. RGP10D-E3/73 can be shipped within 24 hours after order. If you have any demands for RGP10D-E3/73, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RGP10D-E3/73 Toote atribuudid

Osa number : RGP10D-E3/73
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 200V 1A DO204AL
Sari : SUPERECTIFIER®
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 200V
Praegune - keskmine puhastatud (Io) : 1A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.3V @ 1A
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 150ns
Praegune - vastupidine leke @ Vr : 5µA @ 200V
Mahtuvus @ Vr, F : 15pF @ 4V, 1MHz
Paigaldus tüüp : Through Hole
Pakett / kohver : DO-204AL, DO-41, Axial
Tarnija seadme pakett : DO-204AL (DO-41)
Töötemperatuur - ristmik : -65°C ~ 175°C

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