Vishay Semiconductor Diodes Division - V8PAM12-M3/I

KEY Part #: K6428349

V8PAM12-M3/I Hinnakujundus (USD) [556674tk Laos]

  • 1 pcs$0.06644

Osa number:
V8PAM12-M3/I
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE SCHOTTKY 120V 8A DO221BC. Schottky Diodes & Rectifiers If 8A Vrrm 120V Ifsm 100A
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - bipolaarsed (BJT) - ühepoolsed, eel, Transistorid - bipolaarsed (BJT) - üksikud, Transistorid - bipolaarsed (BJT) - massiivid, Transistorid - JFET-id, Dioodid - Zener - massiivid, Transistorid - eriotstarbelised, Dioodid - Zener - üksikud and Dioodid - RF ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division V8PAM12-M3/I electronic components. V8PAM12-M3/I can be shipped within 24 hours after order. If you have any demands for V8PAM12-M3/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

V8PAM12-M3/I Toote atribuudid

Osa number : V8PAM12-M3/I
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE SCHOTTKY 120V 8A DO221BC
Sari : eSMP®, TMBS®
Osa olek : Active
Dioodi tüüp : Schottky
Pinge - tagurpidi alalisvool (Vr) (max) : 120V
Praegune - keskmine puhastatud (Io) : 8A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 880mV @ 8A
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : -
Praegune - vastupidine leke @ Vr : 500µA @ 120V
Mahtuvus @ Vr, F : 730pF @ 4V, 1MHz
Paigaldus tüüp : Surface Mount
Pakett / kohver : DO-221BC, SMA Flat Leads Exposed Pad
Tarnija seadme pakett : DO-221BC (SMPA)
Töötemperatuur - ristmik : -40°C ~ 175°C

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