Vishay Semiconductor Diodes Division - BYG24GHM3_A/I

KEY Part #: K6439627

BYG24GHM3_A/I Hinnakujundus (USD) [521591tk Laos]

  • 1 pcs$0.07091
  • 15,000 pcs$0.06167

Osa number:
BYG24GHM3_A/I
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE AVALANCHE 400V 1.5A DO214. Rectifiers 1.5A,400V,140nS AVAL AEC-Q101 Qualified
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Transistorid - IGBT-moodulid, Transistorid - FET, MOSFET - RF, Türistorid - SCR - moodulid, Transistorid - FET, MOSFET - massiivid, Türistorid - DIAC-d, SIDAC-id, Dioodid - Zener - massiivid, Transistorid - eriotstarbelised and Transistorid - bipolaarsed (BJT) - massiivid ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division BYG24GHM3_A/I electronic components. BYG24GHM3_A/I can be shipped within 24 hours after order. If you have any demands for BYG24GHM3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYG24GHM3_A/I Toote atribuudid

Osa number : BYG24GHM3_A/I
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE AVALANCHE 400V 1.5A DO214
Sari : Automotive, AEC-Q101
Osa olek : Active
Dioodi tüüp : Avalanche
Pinge - tagurpidi alalisvool (Vr) (max) : 400V
Praegune - keskmine puhastatud (Io) : 1.5A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 1.25V @ 1.5A
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 140ns
Praegune - vastupidine leke @ Vr : 1µA @ 400V
Mahtuvus @ Vr, F : -
Paigaldus tüüp : Surface Mount
Pakett / kohver : DO-214AC, SMA
Tarnija seadme pakett : DO-214AC (SMA)
Töötemperatuur - ristmik : -55°C ~ 150°C

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