Vishay Semiconductor Diodes Division - ESH1C-E3/5AT

KEY Part #: K6434058

ESH1C-E3/5AT Hinnakujundus (USD) [617832tk Laos]

  • 1 pcs$0.05987
  • 7,500 pcs$0.05425

Osa number:
ESH1C-E3/5AT
Tootja:
Vishay Semiconductor Diodes Division
Täpsem kirjeldus:
DIODE GEN PURP 150V 1A DO214AC. Rectifiers 150 Volt 1.0A 25ns Glass Passivated
Manufacturer's standard lead time:
Laos
Säilitusaeg:
Üks aasta
Chip From:
Hongkong
RoHS:
Makseviis:
Saadetise viis:
Perekonna kategooriad:
KEY Components Co, Ltd on elektrooniliste komponentide turustaja, kes pakub tootekategooriaid, sealhulgas: Türistorid - SCR - moodulid, Transistorid - IGBT-moodulid, Türistorid - SCR, Elektrijuhi moodulid, Dioodid - alaldid - massiivid, Transistorid - IGBT - üksikud, Transistorid - bipolaarsed (BJT) - massiivid and Transistorid - bipolaarsed (BJT) - eelkallutatud m ...
Konkurentsieelis:
We specialize in Vishay Semiconductor Diodes Division ESH1C-E3/5AT electronic components. ESH1C-E3/5AT can be shipped within 24 hours after order. If you have any demands for ESH1C-E3/5AT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ESH1C-E3/5AT Toote atribuudid

Osa number : ESH1C-E3/5AT
Tootja : Vishay Semiconductor Diodes Division
Kirjeldus : DIODE GEN PURP 150V 1A DO214AC
Sari : -
Osa olek : Active
Dioodi tüüp : Standard
Pinge - tagurpidi alalisvool (Vr) (max) : 150V
Praegune - keskmine puhastatud (Io) : 1A
Pinge - edasi (Vf) (maksimaalselt) @ kui : 900mV @ 1A
Kiirus : Fast Recovery =< 500ns, > 200mA (Io)
Vastupidine taastumisaeg (trr) : 25ns
Praegune - vastupidine leke @ Vr : 1µA @ 150V
Mahtuvus @ Vr, F : -
Paigaldus tüüp : Surface Mount
Pakett / kohver : DO-214AC, SMA
Tarnija seadme pakett : DO-214AC (SMA)
Töötemperatuur - ristmik : -55°C ~ 175°C

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